1.45 billion! ANSI will build a new 8-inch SiC and GaN production line

On June 27, semiconductor manufacturer Nexperia announced plans to invest $200 million (about 1.45 billion yuan) in the development of next-generation wide-band gap semiconductors (WBG) such as silicon carbide (SiC) and gallium nitride (GaN), and establish production infrastructure at its plant in Hamburg, Germany.

At the same time, wafer fab capacity for silicon (Si) diodes and transistors will also increase. The investments were announced in conjunction with Hamburg's Minister of Economy, Dr. Melanie Leonhard, on the 100th anniversary of the production site.

In order to meet the growing long-term demand for high-efficiency power semiconductors, from June 2024, all three of the company's processes (SiC, GaN and Si) devices will be developed and manufactured in Germany.

In the same month, the first high-voltage GaN d-mode transistor and SiC diode production lines were put into operation. The next milestone will be the construction of modern, cost-effective SiC MOSFET and low-voltage GaN HEMT 8-inch production lines, which are expected to be completed at the Hamburg plant over the next two years.

At the same time, the investment will also contribute to the further automation of the existing infrastructure at the Hamburg facility in Germany and the expansion of silicon production capacity through a systematic conversion to 8-inch wafers. The expansion of the clean room area will also be accompanied by a new R&D laboratory to continue to ensure a seamless transition from research to production in the future.

Achim Kempe, Chief Operating Officer and Managing Director of Achim Semiconductor Germany, commented: "This investment strengthens our position as a leading supplier of energy-efficient semiconductors, allowing us to use the electricity available more responsibly. In the future, our Hamburg Fab will cover the full range of wide-gap semiconductors, while remaining the largest small signal diode and transistor factory."